Продукція > RENESAS ELECTRONICS AMERICA INC > RJP65T43DPQ-A0#T2
RJP65T43DPQ-A0#T2

RJP65T43DPQ-A0#T2 Renesas Electronics America Inc

rjp65t43dpq-a0-data-sheet-650v-30a-igbt-application-power-factor-correction-circuit
Виробник: Renesas Electronics America Inc
Description: IGBT TRENCH 650V 60A TO247A
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 69 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 170µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 35ns/105ns
IGBT Type: Trench
Supplier Device Package: TO-247A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1553 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.51 грн
10+225.33 грн
100+182.30 грн
500+152.07 грн
1000+130.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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Технічний опис RJP65T43DPQ-A0#T2 Renesas Electronics America Inc

Description: IGBT TRENCH 650V 60A TO247A, Power - Max: 150 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Part Status: Active, Gate Charge: 69 nC, Test Condition: 400V, 20A, 10Ohm, 15V, Switching Energy: 170µJ (on), 130µJ (off), Td (on/off) @ 25°C: 35ns/105ns, IGBT Type: Trench, Supplier Device Package: TO-247A, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.