RN1110ACT(TPL3) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Resistor - Base (R1): 47 kOhms
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 80 mA
Part Status: Active
Supplier Device Package: CST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 14+ | 22.94 грн |
| 23+ | 13.64 грн |
| 100+ | 8.54 грн |
| 500+ | 5.93 грн |
| 1000+ | 5.25 грн |
| 2000+ | 4.68 грн |
| 5000+ | 3.99 грн |
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Технічний опис RN1110ACT(TPL3) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3, Resistor - Base (R1): 47 kOhms, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 80 mA, Part Status: Active, Supplier Device Package: CST3, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Cut Tape (CT).