RP1H065SPTR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CH 45V 6.5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис RP1H065SPTR Rohm Semiconductor
Description: MOSFET P-CH 45V 6.5A MPT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 6.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: MPT6, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V.