RQA0005QXDQS#H1 Renesas Electronics Corporation


RQA0005QXDQS_Rev1.00_10-16-06.pdf Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 16V 800MA UPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 750mV @ 1mA
Supplier Device Package: UPAK
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 0 V
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Технічний опис RQA0005QXDQS#H1 Renesas Electronics Corporation

Description: MOSFET N-CH 16V 800MA UPAK, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Power Dissipation (Max): 9W (Tc), Vgs(th) (Max) @ Id: 750mV @ 1mA, Supplier Device Package: UPAK, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 16 V, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 0 V.