RRQ030P03FRATR ROHM SEMICONDUCTOR
Виробник: ROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис RRQ030P03FRATR ROHM SEMICONDUCTOR
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -3A, Pulsed drain current: -12A, Power dissipation: 1.25W, Case: SOT457, Gate-source voltage: ±20V, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 5.2nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry, Version: ESD, кількість в упаковці: 1 шт.
Інші пропозиції RRQ030P03FRATR
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RRQ030P03FRATR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.25W Case: SOT457 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
товару немає в наявності |