
RRQ030P03FRATR ROHM SEMICONDUCTOR

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Polarisation: unipolar
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Kind of package: reel; tape
Version: ESD
Gate charge: 5.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -12A
Mounting: SMD
Case: SOT457
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 75mΩ
кількість в упаковці: 1 шт
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Технічний опис RRQ030P03FRATR ROHM SEMICONDUCTOR
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457, Polarisation: unipolar, Type of transistor: P-MOSFET, Application: automotive industry, Power dissipation: 1.25W, Kind of package: reel; tape, Version: ESD, Gate charge: 5.2nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: -12A, Mounting: SMD, Case: SOT457, Drain-source voltage: -30V, Drain current: -3A, On-state resistance: 75mΩ, кількість в упаковці: 1 шт.
Інші пропозиції RRQ030P03FRATR
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RRQ030P03FRATR | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457 Polarisation: unipolar Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.25W Kind of package: reel; tape Version: ESD Gate charge: 5.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -12A Mounting: SMD Case: SOT457 Drain-source voltage: -30V Drain current: -3A On-state resistance: 75mΩ |
товару немає в наявності |