RS07J-M-18 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GP 600V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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Технічний опис RS07J-M-18 Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 500MA DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101.
Інші пропозиції RS07J-M-18
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RS07J-M-18 | Виробник : Vishay Semiconductors |
Rectifiers SWITCHING DIODE GENPURP SMF DO219e3M |
товару немає в наявності |