RTQ025P02FRATR ROHM SEMICONDUCTOR



Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 6.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of channel: enhancement
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Технічний опис RTQ025P02FRATR ROHM SEMICONDUCTOR

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6, Case: TSMT6, Mounting: SMD, Kind of package: reel; tape, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Pulsed drain current: -10A, Drain current: -2.5A, Gate charge: 6.4nC, On-state resistance: 0.19Ω, Power dissipation: 1.25W, Gate-source voltage: ±12V, Kind of channel: enhancement.