RV4E031RPTCR1 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CH 30V 3.1A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис RV4E031RPTCR1 Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWFDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V, Power Dissipation (Max): 1.5W, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: DFN1616-6W, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.