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S16GSD2-CT

S16GSD2-CT Diotec Semiconductor

s16asd2.pdf
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 400V TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис S16GSD2-CT Diotec Semiconductor

Description: DIODE GEN PURP 400V TO263AB, Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -50°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tube.