S1BB-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: DIODE GEN PURP 100V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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Технічний опис S1BB-13 Diodes Incorporated
Description: DIODE GEN PURP 100V 1A SMB, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMB, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
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S1BB-13 | Виробник : Diodes Incorporated |
Description: DIODE GEN PURP 100V 1A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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S1BB-13 | Виробник : Diodes Incorporated |
Rectifiers 100V 1A |
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