S1J-CT Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Strip
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.69 грн |
| 50+ | 14.45 грн |
| 100+ | 12.45 грн |
| 200+ | 10.78 грн |
| 400+ | 8.98 грн |
| 800+ | 7.49 грн |
| 1600+ | 6.24 грн |
| 3200+ | 3.86 грн |
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Технічний опис S1J-CT Diotec Semiconductor
Description: DIODE GEN PURP 600V 1A DO214AC, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -50°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Strip.