S1M0060065B SMC Diode Solutions

Description: SILICON CARBIDE MOSFET, 60MOHM,6, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 79Ohm @ 15A, 18V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 650 V.