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S1M1000170J

S1M1000170J SMC DIODE SOLUTIONS

S1M1000170J.pdf
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Case: D2PAK-7
Mounting: SMD
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
On-state resistance: 1.9Ω
Pulsed drain current: 15A
Power dissipation: 100W
Gate charge: 10nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 4.1A
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
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50+154.83 грн
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Технічний опис S1M1000170J SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W, Case: D2PAK-7, Mounting: SMD, Drain-source voltage: 1.7kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, Kind of package: tube, On-state resistance: 1.9Ω, Pulsed drain current: 15A, Power dissipation: 100W, Gate charge: 10nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 4.1A, Kind of channel: enhancement.