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S1M1000170J

S1M1000170J SMC DIODE SOLUTIONS

S1M1000170J.pdf
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4.1A
Pulsed drain current: 15A
Power dissipation: 100W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
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Технічний опис S1M1000170J SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 4.1A, Pulsed drain current: 15A, Power dissipation: 100W, Case: D2PAK-7, Gate-source voltage: -5...20V, On-state resistance: 1.9Ω, Mounting: SMD, Gate charge: 10nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.