S1M1000170J SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Case: D2PAK-7
Mounting: SMD
Kind of package: tube
On-state resistance: 1.9Ω
Drain current: 4.1A
Pulsed drain current: 15A
Drain-source voltage: 1.7kV
Power dissipation: 100W
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 10nC
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 180.05 грн |
| 10+ | 165.11 грн |
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Технічний опис S1M1000170J SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W, Case: D2PAK-7, Mounting: SMD, Kind of package: tube, On-state resistance: 1.9Ω, Drain current: 4.1A, Pulsed drain current: 15A, Drain-source voltage: 1.7kV, Power dissipation: 100W, Technology: SiC, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 10nC.