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S1M1000170K

S1M1000170K SMC DIODE SOLUTIONS


Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 81W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 307 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+319.95 грн
10+208.14 грн
30+193.87 грн
150+172.89 грн
300+164.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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Технічний опис S1M1000170K SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 3.7A, Pulsed drain current: 15A, Power dissipation: 81W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 1.9Ω, Mounting: THT, Gate charge: 10nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.