S1M1000170K SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Drain-source voltage: 1.7kV
Drain current: 3.7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 81W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 10nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 15A
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Drain-source voltage: 1.7kV
Drain current: 3.7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 81W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 10nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 15A
Mounting: THT
Case: TO247-4
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 138.71 грн |
| 8+ | 124.15 грн |
| 10+ | 122.61 грн |
| 21+ | 117.25 грн |
Відгуки про товар
Написати відгук
Технічний опис S1M1000170K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W, Drain-source voltage: 1.7kV, Drain current: 3.7A, On-state resistance: 1.9Ω, Type of transistor: N-MOSFET, Power dissipation: 81W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 10nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 15A, Mounting: THT, Case: TO247-4, кількість в упаковці: 1 шт.
Інші пропозиції S1M1000170K за ціною від 134.26 грн до 199.06 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
S1M1000170K | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W Drain-source voltage: 1.7kV Drain current: 3.7A On-state resistance: 1.9Ω Type of transistor: N-MOSFET Power dissipation: 81W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 10nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 15A Mounting: THT Case: TO247-4 кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
|