S1M1000170K SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
On-state resistance: 1.9Ω
Pulsed drain current: 15A
Power dissipation: 81W
Gate charge: 10nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 3.7A
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 321.96 грн |
| 10+ | 210.01 грн |
| 30+ | 195.19 грн |
| 150+ | 174.60 грн |
| 300+ | 165.54 грн |
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Технічний опис S1M1000170K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W, Case: TO247-4, Mounting: THT, Drain-source voltage: 1.7kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, Kind of package: tube, On-state resistance: 1.9Ω, Pulsed drain current: 15A, Power dissipation: 81W, Gate charge: 10nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 3.7A, Kind of channel: enhancement.