S2M0016120K SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 140A
Pulsed drain current: 314A
Power dissipation: 714W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3342.13 грн |
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Технічний опис S2M0016120K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 140A, Pulsed drain current: 314A, Power dissipation: 714W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 16mΩ, Mounting: THT, Gate charge: 224nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC.