S2M0016120K SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 140A
Pulsed drain current: 314A
Power dissipation: 714W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис S2M0016120K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 140A, Pulsed drain current: 314A, Power dissipation: 714W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 16mΩ, Mounting: THT, Gate charge: 224nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції S2M0016120K
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S2M0016120K | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 140A Pulsed drain current: 314A Power dissipation: 714W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 16mΩ Mounting: THT Gate charge: 224nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
товару немає в наявності |