S2M0025120D SMC Diode Solutions

Description: MOSFET SILICON CARBIDE SIC 1200V, Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247AD, Vgs(th) (Max) @ Id: 4V @ 15mA, Power Dissipation (Max): 446W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Current - Continuous Drain (Id) @ 25°C: 63A (Tj), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.