S2M0025120J SMC DIODE SOLUTIONS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 177nC
On-state resistance: 25mΩ
Drain current: 70A
Pulsed drain current: 250A
Power dissipation: 311W
Drain-source voltage: 1.2kV
кількість в упаковці: 800 шт
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Технічний опис S2M0025120J SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W, Features of semiconductor devices: Kelvin terminal, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Technology: SiC, Mounting: SMD, Case: TO263-7, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 177nC, On-state resistance: 25mΩ, Drain current: 70A, Pulsed drain current: 250A, Power dissipation: 311W, Drain-source voltage: 1.2kV, кількість в упаковці: 800 шт.
Інші пропозиції S2M0025120J
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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S2M0025120J | Виробник : SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Technology: SiC Mounting: SMD Case: TO263-7 Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 177nC On-state resistance: 25mΩ Drain current: 70A Pulsed drain current: 250A Power dissipation: 311W Drain-source voltage: 1.2kV |
товару немає в наявності |