S2M0025120J

S2M0025120J SMC Diode Solutions


S2M0025120J%20N2482%20REV.-.pdf Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 1000 V
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Технічний опис S2M0025120J SMC Diode Solutions

Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tj), Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Power Dissipation (Max): 311W (Tc), Vgs(th) (Max) @ Id: 4V @ 15mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 1000 V.

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S2M0025120J Виробник : SMC DIODE SOLUTIONS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE94F2511B2C37A0D5&compId=S2M0025120J.pdf?ci_sign=54c1be7a9dcbd350ca097af80003dfabb1d3d8c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 70A
Pulsed drain current: 250A
Power dissipation: 311W
Case: TO263-7
Gate-source voltage: -5...20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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