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S2M0025120K SMC DIODE SOLUTIONS

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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 130nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 250A
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 39A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт

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Технічний опис S2M0025120K SMC DIODE SOLUTIONS

Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4V @ 15mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V.

Інші пропозиції S2M0025120K

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	S2M0025120K	Виробник : SMC Diode Solutions	Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4V @ 15mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V	товару немає в наявності	В кошику од. на суму грн.
	S2M0025120K	Виробник : SMC DIODE SOLUTIONS	Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 130nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 250A Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 39A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 517W Polarisation: unipolar Kind of package: tube	товару немає в наявності	В кошику од. на суму грн.