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S2M0040120K-1

S2M0040120K-1 SMC DIODE SOLUTIONS


Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
On-state resistance: 40mΩ
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 320.5W
Gate charge: 118nC
Polarisation: unipolar
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1407.55 грн
5+1179.19 грн
10+1038.67 грн
30+929.47 грн
В кошику  од. на суму  грн.
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Технічний опис S2M0040120K-1 SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 55A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, Kind of package: tube, Case: TO247-4, On-state resistance: 40mΩ, Mounting: THT, Pulsed drain current: 160A, Power dissipation: 320.5W, Gate charge: 118nC, Polarisation: unipolar.