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S2M0040120K-1

S2M0040120K-1 SMC DIODE SOLUTIONS


Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 118nC
On-state resistance: 40mΩ
Drain current: 55A
Power dissipation: 320.5W
Pulsed drain current: 160A
Drain-source voltage: 1.2kV
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
1+1417.50 грн
5+1186.81 грн
10+1044.76 грн
30+935.50 грн
В кошику  од. на суму  грн.
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Технічний опис S2M0040120K-1 SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W, Kind of package: tube, Technology: SiC, Kind of channel: enhancement, Mounting: THT, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Case: TO247-4, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 118nC, On-state resistance: 40mΩ, Drain current: 55A, Power dissipation: 320.5W, Pulsed drain current: 160A, Drain-source voltage: 1.2kV.