S2M0080120D SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W
Technology: SiC
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
On-state resistance: 137mΩ
Mounting: THT
Pulsed drain current: 82A
Power dissipation: 231W
Gate charge: 54nC
Polarisation: unipolar
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1269.90 грн |
| 10+ | 967.56 грн |
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Технічний опис S2M0080120D SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247AD, Vgs(th) (Max) @ Id: 4V @ 10mA, Power Dissipation (Max): 231W (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc).
Інші пропозиції S2M0080120D за ціною від 825.13 грн до 1124.24 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| S2M0080120D | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: TO-247AD Vgs(th) (Max) @ Id: 4V @ 10mA Power Dissipation (Max): 231W (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) |
на замовлення 276 шт: термін постачання 21-31 дні (днів) |
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| S2M0080120D |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 231W (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Description: MOSFET SILICON CARBIDE SIC 1200V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 231W (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1124.24 грн |
| 10+ | 954.08 грн |
| 100+ | 825.13 грн |