S2M0080120I SMC Diode Solutions

Description: SILICON CARBIDE MOSFET, 80MOHM,1, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-220MF-3L, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 59.9 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V.