S2M0080120J SMC DIODE SOLUTIONS


S2M0080120J.pdf Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 37A; Idm: 82A; 234W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TO263-7
Power dissipation: 234W
Technology: SiC
Kind of package: reel; tape
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 82A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 800 шт
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Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 37A; Idm: 82A; 234W, Mounting: SMD, Features of semiconductor devices: Kelvin terminal, Case: TO263-7, Power dissipation: 234W, Technology: SiC, Kind of package: reel; tape, Gate charge: 54nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 82A, Drain-source voltage: 1.2kV, Drain current: 37A, On-state resistance: 77mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, кількість в упаковці: 800 шт.

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S2M0080120J Виробник : SMC DIODE SOLUTIONS S2M0080120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 37A; Idm: 82A; 234W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TO263-7
Power dissipation: 234W
Technology: SiC
Kind of package: reel; tape
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 82A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній