S2M0080120K SMC Diode Solutions

Description: MOSFET SILICON CARBIDE SIC 1200V, Vgs(th) (Max) @ Id: 4V @ 10mA, Power Dissipation (Max): 231W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-4.