
S2M0080120N SMC DIODE SOLUTIONS

Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 137mΩ
Pulsed drain current: 82A
Power dissipation: 176W
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис S2M0080120N SMC DIODE SOLUTIONS
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 25A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 137mΩ, Pulsed drain current: 82A, Power dissipation: 176W, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Features of semiconductor devices: Kelvin terminal, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції S2M0080120N
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
S2M0080120N | Виробник : SMC DIODE SOLUTIONS |
![]() Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 25A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 137mΩ Pulsed drain current: 82A Power dissipation: 176W Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |