S2M0080120N

S2M0080120N SMC DIODE SOLUTIONS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9396BD640BC720D5&compId=S2M0080120N.pdf?ci_sign=332de6e2e362531f7498398663a61a2d5edeae88 Виробник: SMC DIODE SOLUTIONS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 137mΩ
Pulsed drain current: 82A
Power dissipation: 176W
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис S2M0080120N SMC DIODE SOLUTIONS

Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 25A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 137mΩ, Pulsed drain current: 82A, Power dissipation: 176W, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Features of semiconductor devices: Kelvin terminal, Mechanical mounting: screw, кількість в упаковці: 1 шт.

Інші пропозиції S2M0080120N

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S2M0080120N S2M0080120N Виробник : SMC DIODE SOLUTIONS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9396BD640BC720D5&compId=S2M0080120N.pdf?ci_sign=332de6e2e362531f7498398663a61a2d5edeae88 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 137mΩ
Pulsed drain current: 82A
Power dissipation: 176W
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.