S2M0080120T SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 82A
Power dissipation: 231W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 82A
Power dissipation: 231W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 236.66 грн |
| 5+ | 192.97 грн |
| 14+ | 182.73 грн |
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Технічний опис S2M0080120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 29A, Pulsed drain current: 82A, Power dissipation: 231W, Case: TOLL, Gate-source voltage: -5...20V, On-state resistance: 137mΩ, Mounting: SMD, Gate charge: 54nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції S2M0080120T за ціною від 210.77 грн до 283.99 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S2M0080120T | Виробник : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 29A Pulsed drain current: 82A Power dissipation: 231W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 137mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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