Продукція > SMC DIODE SOLUTIONS > S2M0080120T
S2M0080120T
S2M0080120T
S2M0080120TS2M0080120T

S2M0080120T SMC DIODE SOLUTIONS


Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Case: TOLL
Mounting: SMD
Drain-source voltage: 1.2kV
Transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: reel; tape
On-state resistance: 137mΩ
Pulsed drain current: 82A
Power dissipation: 231W
Gate charge: 54nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 29A
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+305.27 грн
10+255.79 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис S2M0080120T SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL, Case: TOLL, Mounting: SMD, Drain-source voltage: 1.2kV, Transistor: N-MOSFET, Gate-source voltage: -5...20V, Kind of package: reel; tape, On-state resistance: 137mΩ, Pulsed drain current: 82A, Power dissipation: 231W, Gate charge: 54nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 29A, Kind of channel: enhancement.