S2M0120120J SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 153W
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: D2PAK-7
On-state resistance: 212mΩ
Mounting: SMD
Pulsed drain current: 66A
Power dissipation: 153W
Gate charge: 29.6nC
Polarisation: unipolar
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 390.18 грн |
| 10+ | 249.72 грн |
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Технічний опис S2M0120120J SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V, Power Dissipation (Max): 153W (Tc), Vgs(th) (Max) @ Id: 4V @ 3.3mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V.
Інші пропозиції S2M0120120J за ціною від 363.56 грн до 531.66 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
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S2M0120120J | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.3mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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| S2M0120120J |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.3mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.3mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 531.66 грн |
| 10+ | 363.56 грн |