S2M0160120J SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Drain current: 11A
Pulsed drain current: 40A
Power dissipation: 122W
Drain-source voltage: 1.2kV
Technology: SiC
| Кількість | Ціна |
|---|---|
| 2+ | 440.82 грн |
| 10+ | 280.73 грн |
| 50+ | 253.00 грн |
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Технічний опис S2M0160120J SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V, Power Dissipation (Max): 122W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V.
Інші пропозиції S2M0160120J
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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S2M0160120J | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V Power Dissipation (Max): 122W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. |
| S2M0160120J |
|
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.