S2M0160120T SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 121W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: TOLL
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 121W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: TOLL
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.3Ω
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 222.00 грн |
| 9+ | 109.59 грн |
| 23+ | 103.46 грн |
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Технічний опис S2M0160120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL, Kind of package: reel; tape, Type of transistor: N-MOSFET, Power dissipation: 121W, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Gate charge: 26.5nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 40A, Mounting: SMD, Case: TOLL, Drain-source voltage: 1.2kV, Drain current: 12A, On-state resistance: 0.3Ω, кількість в упаковці: 1 шт.
Інші пропозиції S2M0160120T за ціною від 119.55 грн до 266.40 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S2M0160120T | Виробник : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 121W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 26.5nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 40A Mounting: SMD Case: TOLL Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 0.3Ω кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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