S2M0160120T SMC DIODE SOLUTIONS



Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 121W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
2+288.75 грн
10+179.87 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис S2M0160120T SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 12A, Pulsed drain current: 40A, Power dissipation: 121W, Case: TOLL, Gate-source voltage: -5...20V, On-state resistance: 0.3Ω, Mounting: SMD, Gate charge: 26.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Technology: SiC, Features of semiconductor devices: Kelvin terminal.