S2M0160120T SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Mounting: SMD
Technology: SiC
Case: TOLL
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 121W
Drain current: 12A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Mounting: SMD
Technology: SiC
Case: TOLL
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 121W
Drain current: 12A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: reel; tape
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 210.74 грн |
| 10+ | 130.46 грн |
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Технічний опис S2M0160120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL, Mounting: SMD, Technology: SiC, Case: TOLL, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 26.5nC, On-state resistance: 0.3Ω, Power dissipation: 121W, Drain current: 12A, Pulsed drain current: 40A, Drain-source voltage: 1.2kV, Kind of package: reel; tape, кількість в упаковці: 1 шт.
Інші пропозиції S2M0160120T за ціною від 124.10 грн до 252.89 грн
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S2M0160120T | Виробник : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Mounting: SMD Technology: SiC Case: TOLL Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 26.5nC On-state resistance: 0.3Ω Power dissipation: 121W Drain current: 12A Pulsed drain current: 40A Drain-source voltage: 1.2kV Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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