S2M0160120T SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 121W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 121W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 223.09 грн |
| 9+ | 111.85 грн |
| 23+ | 106.33 грн |
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Технічний опис S2M0160120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 12A, Pulsed drain current: 40A, Power dissipation: 121W, Case: TOLL, Gate-source voltage: -5...20V, On-state resistance: 0.3Ω, Mounting: SMD, Gate charge: 26.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції S2M0160120T за ціною від 122.87 грн до 267.70 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S2M0160120T | Виробник : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 40A Power dissipation: 121W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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