S3D50065D1 SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 50A; TO247-3,TO247AD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 50A
Semiconductor structure: single diode
Case: TO247-3; TO247AD
Max. forward voltage: 2.4V
Max. forward impulse current: 209A
Kind of package: tube
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Технічний опис S3D50065D1 SMC DIODE SOLUTIONS
Description: DIODE SIL CARB 650V 112A TO247AD, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247AD, Current - Average Rectified (Io): 112A, Capacitance @ Vr, F: 3100pF @ 0V, 100MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns.
Інші пропозиції S3D50065D1 за ціною від 468.37 грн до 677.15 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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S3D50065D1 | SMC Diode Solutions |
Description: DIODE SIL CARB 650V 112A TO247AD Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AD Current - Average Rectified (Io): 112A Capacitance @ Vr, F: 3100pF @ 0V, 100MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns |
на замовлення 244 шт: термін постачання 21-31 дні (днів) |
|
| S3D50065D1 |
|
Виробник: SMC Diode Solutions
Description: DIODE SIL CARB 650V 112A TO247AD
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 112A
Capacitance @ Vr, F: 3100pF @ 0V, 100MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Description: DIODE SIL CARB 650V 112A TO247AD
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 112A
Capacitance @ Vr, F: 3100pF @ 0V, 100MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
на замовлення 244 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 677.15 грн |
| 25+ | 468.37 грн |