S3M0016120B SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: T2PAK
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 75A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 576W
Polarisation: unipolar
Gate charge: 287nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 845.67 грн |
| 2+ | 671.28 грн |
| 4+ | 635.13 грн |
| 10+ | 626.48 грн |
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Технічний опис S3M0016120B SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V, Power Dissipation (Max): 576W (Tc), Vgs(th) (Max) @ Id: 4V @ 30mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V.
Інші пропозиції S3M0016120B за ціною від 731.97 грн до 1014.80 грн
| Фото | Назва | Виробник | Інформація |
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| S3M0016120B | Виробник : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W Mounting: SMD Features of semiconductor devices: Kelvin terminal Case: T2PAK Kind of package: tube Drain-source voltage: 1.2kV Drain current: 75A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 576W Polarisation: unipolar Gate charge: 287nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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S3M0016120B | Виробник : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V Power Dissipation (Max): 576W (Tc) Vgs(th) (Max) @ Id: 4V @ 30mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V |
товару немає в наявності |