S3M0016120D SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 287nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 1+ | 1091.64 грн |
| 3+ | 911.12 грн |
| 10+ | 802.69 грн |
| 30+ | 746.38 грн |
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Технічний опис S3M0016120D SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 85A, Pulsed drain current: 250A, Power dissipation: 732W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 25mΩ, Mounting: THT, Gate charge: 287nC, Kind of package: tube, Kind of channel: enhancement.