Продукція > SMC DIODE SOLUTIONS > S3M0016120D
S3M0016120D

S3M0016120D SMC DIODE SOLUTIONS


Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 287nC
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Polarisation: unipolar
Power dissipation: 732W
Technology: SiC
Type of transistor: N-MOSFET
Drain current: 85A
Kind of channel: enhancement
Pulsed drain current: 250A
Drain-source voltage: 1.2kV
на замовлення 292 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1084.70 грн
3+906.16 грн
10+798.43 грн
30+739.96 грн
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис S3M0016120D SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Mounting: THT, Case: TO247-3, Kind of package: tube, Gate charge: 287nC, Gate-source voltage: -4...18V, On-state resistance: 25mΩ, Polarisation: unipolar, Power dissipation: 732W, Technology: SiC, Type of transistor: N-MOSFET, Drain current: 85A, Kind of channel: enhancement, Pulsed drain current: 250A, Drain-source voltage: 1.2kV.