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S3M0016120D

S3M0016120D SMC DIODE SOLUTIONS

S3M0016120D.pdf
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 16mΩ
Pulsed drain current: 250A
Power dissipation: 732W
Gate charge: 287nC
Polarisation: unipolar
Technology: SiC
Drain current: 85A
Kind of channel: enhancement
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Технічний опис S3M0016120D SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Case: TO247-3, Mounting: THT, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, On-state resistance: 16mΩ, Pulsed drain current: 250A, Power dissipation: 732W, Gate charge: 287nC, Polarisation: unipolar, Technology: SiC, Drain current: 85A, Kind of channel: enhancement.