S3M0016120K SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 287nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 287nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 875.38 грн |
| 2+ | 674.23 грн |
| 4+ | 637.21 грн |
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Технічний опис S3M0016120K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 85A, Pulsed drain current: 250A, Power dissipation: 732W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 25mΩ, Mounting: THT, Gate charge: 287nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції S3M0016120K за ціною від 735.35 грн до 1050.45 грн
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S3M0016120K | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 732W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 25mΩ Mounting: THT Gate charge: 287nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
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