S3M0016120K SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Mounting: THT, Power dissipation: 732W, Gate charge: 287nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 85A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: TO247-4, On-state resistance: 25mΩ, Pulsed drain current: 250A.