S3M0016120N SMC Diode Solutions

Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V, Power Dissipation (Max): 732W (Tc), Vgs(th) (Max) @ Id: 4V @ 30mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V.