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S3M0025120B

S3M0025120B SMC DIODE SOLUTIONS

S3M0025120B.pdf
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W
Mounting: SMD
Power dissipation: 394W
Gate charge: 175nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: T2PAK
On-state resistance: 36mΩ
Pulsed drain current: 200A
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1000.97 грн
3+833.81 грн
10+739.00 грн
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Технічний опис S3M0025120B SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W, Mounting: SMD, Power dissipation: 394W, Gate charge: 175nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 52A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: T2PAK, On-state resistance: 36mΩ, Pulsed drain current: 200A.