S3M0025120B SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 200A
Power dissipation: 394W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис S3M0025120B SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 52A, Pulsed drain current: 200A, Power dissipation: 394W, Case: T2PAK, Gate-source voltage: -4...18V, On-state resistance: 36mΩ, Mounting: SMD, Gate charge: 175nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції S3M0025120B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
S3M0025120B | Виробник : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 200A Power dissipation: 394W Case: T2PAK Gate-source voltage: -4...18V On-state resistance: 36mΩ Mounting: SMD Gate charge: 175nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
товару немає в наявності |