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S3M0025120K

S3M0025120K SMC DIODE SOLUTIONS

S3M0025120K%20N2774%20REV.-.pdf Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 175nC
On-state resistance: 36mΩ
Power dissipation: 517W
Drain current: 54A
Pulsed drain current: 200A
Drain-source voltage: 1.2kV
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
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1+601.39 грн
2+467.75 грн
3+466.96 грн
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Технічний опис S3M0025120K SMC DIODE SOLUTIONS

Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 4V @ 20mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V.

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S3M0025120K S3M0025120K Виробник : SMC Diode Solutions S3M0025120K%20N2774%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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