S3M0040120B SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 333W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
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Технічний опис S3M0040120B SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 40A, Pulsed drain current: 200A, Power dissipation: 333W, Case: T2PAK, Gate-source voltage: -4...18V, On-state resistance: 50mΩ, Mounting: SMD, Gate charge: 143nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції S3M0040120B
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S3M0040120B | Виробник : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 200A Power dissipation: 333W Case: T2PAK Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 143nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
товару немає в наявності |