S3M0040120B SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: T2PAK
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 143nC
On-state resistance: 50mΩ
Drain current: 40A
Power dissipation: 333W
Pulsed drain current: 200A
Drain-source voltage: 1.2kV
| Кількість | Ціна |
|---|---|
| 2+ | 382.89 грн |
| 3+ | 320.24 грн |
| 10+ | 284.94 грн |
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Технічний опис S3M0040120B SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W, Kind of package: tube, Technology: SiC, Kind of channel: enhancement, Mounting: SMD, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Case: T2PAK, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 143nC, On-state resistance: 50mΩ, Drain current: 40A, Power dissipation: 333W, Pulsed drain current: 200A, Drain-source voltage: 1.2kV.