S3M0040120B SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 333W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 374.07 грн |
| 3+ | 312.79 грн |
| 10+ | 286.65 грн |
Відгуки про товар
Написати відгук
Технічний опис S3M0040120B SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 40A, Pulsed drain current: 200A, Power dissipation: 333W, Case: T2PAK, Gate-source voltage: -4...18V, On-state resistance: 50mΩ, Mounting: SMD, Gate charge: 143nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC.