S3M0040120D SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Mounting: THT
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 143nC
On-state resistance: 50mΩ
Power dissipation: 130W
Drain current: 46A
Pulsed drain current: 223A
Drain-source voltage: 1.2kV
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 514.87 грн |
| 3+ | 381.04 грн |
| 7+ | 360.36 грн |
| 30+ | 346.04 грн |
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Технічний опис S3M0040120D SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 16mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V.
Інші пропозиції S3M0040120D за ціною від 415.25 грн до 617.84 грн
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S3M0040120D | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Mounting: THT Case: TO247-3 Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 143nC On-state resistance: 50mΩ Power dissipation: 130W Drain current: 46A Pulsed drain current: 223A Drain-source voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 291 шт: термін постачання 14-21 дні (днів) |
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S3M0040120D | Виробник : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
товару немає в наявності |