S3M0080120D SMC Diode Solutions

Description: SILICON CARBIDE MOSFET, 80MOHM,1, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 15A, 18V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4V @ 6mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 1000 V.