Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > SBLB10L25HE3/45
SBLB10L25HE3/45

SBLB10L25HE3/45 Vishay General Semiconductor - Diodes Division

SBL(F,B)10L25_Rev_9-AUG-13.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис SBLB10L25HE3/45 Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 25V 10A TO263AB, Current - Reverse Leakage @ Vr: 800 µA @ 25 V, Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 25 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB, Current - Average Rectified (Io): 10A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tube.