SBLB10L25HE3_A/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB
Current - Average Rectified (Io): 10A
Відгуки про товар
Написати відгук
Технічний опис SBLB10L25HE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 800 µA @ 25 V, Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 25 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB, Current - Average Rectified (Io): 10A.
Інші пропозиції SBLB10L25HE3_A/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SBLB10L25HE3_A/I | Виробник : Vishay Semiconductors |
Schottky Diodes & Rectifiers 10A,25V TO-263AB AEC-Q101 Qualified |
товару немає в наявності |