SBYV26C-5001M3/73 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
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Технічний опис SBYV26C-5001M3/73 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-204AL (DO-41), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Tape & Box (TB), Voltage Coupled to Current - Reverse Leakage @ Vr: 600, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1.