SCT020W120G3-4AG STMicroelectronics

Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V, Power Dissipation (Max): 541W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 2.3mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V, Qualification: AEC-Q101.