SCT4090KWATL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
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Технічний опис SCT4090KWATL Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V, Power Dissipation (Max): 71W, Vgs(th) (Max) @ Id: 4.8V @ 4.44mA, Supplier Device Package: TO-263-7LA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V.
Інші пропозиції SCT4090KWATL за ціною від 263.02 грн до 613.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCT4090KWATL | ROHM Semiconductor |
SiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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SCT4090KWATL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| SCT4090KWATL |
|
Виробник: ROHM Semiconductor
SiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 600.83 грн |
| 10+ | 405.68 грн |
| 100+ | 278.21 грн |
| 1000+ | 263.02 грн |
| SCT4090KWATL |
|
Виробник: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 613.54 грн |
| 10+ | 403.77 грн |
| 100+ | 297.79 грн |
| 500+ | 279.36 грн |