Продукція > SEMIKRON DANFOSS > SEMIX101GD126HDS 27890730

SEMIX101GD126HDS 27890730 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F445281E39C0D6&compId=SEMIX101GD126HDS.pdf?ci_sign=590d703237cf213c61687fe66e10fa9fea5fafcd Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Case: SEMIX®13
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
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Технічний опис SEMIX101GD126HDS 27890730 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; thermistor, Electrical mounting: Press-Fit; screw, Case: SEMIX®13, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 150A, Max. off-state voltage: 1.2kV.