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SEMIX101GD12E4S 27890195 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F44B0037B180D6&compId=SEMIX101GD12E4S.pdf?ci_sign=770061c31f5e77e24c4187b7608bacc460e6f071

Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw

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Технічний опис SEMIX101GD12E4S 27890195 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Case: SEMIX®13, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; thermistor, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 300A, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw.