SEMIX101GD12E4S 27890195 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис SEMIX101GD12E4S 27890195 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Case: SEMIX®13, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; thermistor, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 300A, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX101GD12E4S 27890195
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX101GD12E4S 27890195 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: SEMIX®13 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; thermistor Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 300A Application: for UPS; Inverter; photovoltaics Mechanical mounting: screw |
товару немає в наявності |