Продукція > SEMIKRON DANFOSS > SEMIX151GB12VS 27890101

SEMIX151GB12VS 27890101 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F223BDC8F920D6&compId=SEMIX151GB12VS.pdf?ci_sign=9d002681d0774849d34cdc1482f837bf26c3c4ff Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис SEMIX151GB12VS 27890101 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: SEMIX1S, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw, кількість в упаковці: 1 шт.

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SEMIX151GB12VS 27890101 Виробник : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F223BDC8F920D6&compId=SEMIX151GB12VS.pdf?ci_sign=9d002681d0774849d34cdc1482f837bf26c3c4ff Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.