SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 19039.53 грн |
| 2+ | 15554.98 грн |
| 4+ | 14037.42 грн |
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Технічний опис SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: SEMIX®13, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw.