SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMIX®13
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
| Кількість | Ціна |
|---|---|
| 1+ | 18953.18 грн |
| 2+ | 15484.43 грн |
| 4+ | 13973.76 грн |
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Технічний опис SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Semiconductor structure: transistor/transistor, Electrical mounting: Press-Fit; screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; thermistor, Case: SEMIX®13, Mechanical mounting: screw, Max. off-state voltage: 1.2kV, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 450A.