Продукція > SEMIKRON DANFOSS > SEMIX202GB12E4S 27890110

SEMIX202GB12E4S 27890110 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV

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Технічний опис SEMIX202GB12E4S 27890110 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Mechanical mounting: screw, Electrical mounting: Press-Fit; screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV.