SEMIX202GB12VS 27890111 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Case: SEMIX2S
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 14626.93 грн |
| 3+ | 11912.84 грн |
| 6+ | 10774.67 грн |
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Технічний опис SEMIX202GB12VS 27890111 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Mechanical mounting: screw, Case: SEMIX2S, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor.