SEMIX205GD12E4 21919530 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
кількість в упаковці: 1 шт
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Технічний опис SEMIX205GD12E4 21919530 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Mechanical mounting: screw, Topology: IGBT three-phase bridge; thermistor, Type of semiconductor module: IGBT, Case: SEMiX® 5, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX205GD12E4 21919530
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX205GD12E4 21919530 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 5 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw |
товару немає в наявності |